Artificial Dielectric Layer Based on PECVD Silicon Carbide for Terahertz Sensing Applications
نویسندگان
چکیده
The refractive index of a conventional dielectric layer can be enhanced using an Artificial Dielectric Layer (ADL). Here we present the fabrication of low temperature PECVD Silicon Carbide (SiC) membranes with very high refractive index (up to 5 at 1 THz) in the terahertz frequency range. The SiC deposition parameters have been tuned to reach a very low residual stress level (-25 to 100 MPa). The excellent mechanical properties of this material allowed the fabrication of very large square membranes (5 mm side) with a thickness from 5 m to 10 m. Using silicon carbide as host material, ADL with a refractive index of 9.9 at 1 THz can be effectively realized. © 2014 The Authors. Published by Elsevier Ltd. Peer-review under responsibility of the scientific committee of Eurosensors 2014.
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